| 1. | Resistance - temperature coefficient of resistance thermometer sensor
热电阻的电阻温度系数 |
| 2. | Temperature coefficient of resistance
电阻温度系数 |
| 3. | Thermal coefficient of resistance of vanadium oxide film formed by lon - beam - enhanced deposition
离子束增强沉积氧化钒薄膜的温度系数 |
| 4. | Method of test for temperature coefficient of resistance of alloy wire for precision resistors
精密电阻器合金丝电阻温度系数试验方法 |
| 5. | The coefficient of resistance to temperature of the nano - bulk al is more than 50 times that of ordinary al materials
所测定的纳米铝块体材料的电阻温度系数是普通多晶铝块体材料的50多倍。 |
| 6. | 5 . manganin thin films with low temperature coefficient of resistance were prepared by magnetron sputtering . the changes of tcr under difference deposition and heat treatment conditions were studied
首次采用磁控溅射法沉积了低电阻温度系数的锰铜薄膜，研究了在不同电子科技大学博士学位论文沉积及热处理条件下薄膜tcr的变化。 |
| 7. | Two chinese invention patents , which titled " manganin thin film ultra - high pressure sensors " and " preparation method of manganin thin films with low temperature coefficient of resistance " , have been applied based on the above original work of this thesis
以上第l 3创新点及第5创新点已经分别申请了两项中国发明专利： “薄膜式锰铜超高压力传感器”和“低电阻温度系数锰铜薄膜的制备方法” 。 |
| 8. | Tcr ( temperature coefficient of resistance ) of the sample was measured . the measurement results showed that the tcr of the thin film which resistance range was under 45 - 60k was larger than that which resistance under 15 - 25k . at last the xps was used to analyze the composition of the films
基片温度的变化直接影响膜层的生长及特性，可以明显地改善薄膜的机械强度和附着力，而且随着基片温度的升高，在磁控溅射过程中各个价态的钒容易向高价的钒进行转换。 |
| 9. | The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched . the smaller bismuth ruthenate partical is , sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero . the limit size of bismuth ruthenate partical is 0 . 56 m
研究了各相粉体平均粒径对膜层性能的影响,结果表明:钌酸铋平均粒径越小,膜层的方阻值越小,电阻温度系数偏正,重烧变化率越接近零值,球磨工艺的极限平均粒径为0 . 56 m 。 |
| 10. | A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film . after annealing , vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained . the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5 , so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
利用离子束增强沉积设备，在ar ~ +离子束对v _ 2o _ 5靶溅射沉积的同时，用氩、氢混合束对沉积膜作高剂量的离子束轰击，使得被氩离子轰击后断键的氧化钒分子，再被注入氢降价，然后经适当的退火，成功地制备了热电阻温度系数高达4的vo _ 2薄膜(国外报道值为2 - 3 ) ，并研制了单元悬空结构探测器和8 1 ， 16 1线性阵列。 |
